MRFG35002N6AT1 transistor equivalent, gallium arsenide phemt rf power field effect transistor.
* Excellent Phase Linearity and Group Delay Characteristics
* High Gain, High Efficiency and High Linearity
* RoHS Compliant
* In Tape and Reel. T1 Suffix.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment .
13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC
MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3
C13
C12
C11
C10
C9 C8 C7 R1 C5 C6
C18
C17
C16
C14 www.DataSheet4U.com C15
C19 C20
C22
C21
C1
C2
C3 C4
C23
C.
Image gallery
TAGS
Download